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IXFH6N100F |
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| Part Number | IXFH6N100F |
| Manufacturer | IXYS Corporation |
| Description | Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6N100F VDSS IXFT 6N100F ID25 RDS(on) = 1000 V = 6A = 1.9 Ω t... |
| Features |
● RF capable MOSFETs ● Double metal process for low gate resistance ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic rectifier Applications DC-DC converters ● Switched-mode and resonant-mode power supplies, >500kHz switching ● DC choppers ● 13.5 MHz industrial applications ● Pulse generation ● Laser drivers ● RF amplifiers ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.5 V ±100 nA TJ = 125°C 50 µA 1 mA 1.9 Ω VDSS VG... |
| Document |
 IXFH6N100F Data Sheet
PDF 820.75KB |
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Desde 2024. D4U Semiconductor.
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