SH702 |
Part Number | SH702 |
Manufacturer | Polyfet RF Devices |
Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an... |
Features |
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 90.0 Watts Push - Pull Package Style AH HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 190 Watts Junction to Case Thermal Resistance o 0.85 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
11.5 A
RF CHARACTERISTICS (
SYMBOL ... |
Document |
SH702 Data Sheet
PDF 36.56KB |
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