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SGM2014AN |
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| Part Number | SGM2014AN |
| Manufacturer | Sony Corporation |
| Description | The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplif... |
| Features |
• Ultra small package • Low voltage operation • Low noise: NF = 1.5dB (typ.) at 900MHz • High gain: Ga = 18dB (typ.) at 900MHz • Low cross-modulation • High stability • Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 12 • Gate 1 to source voltage VG1S –5 • Gate 2 to source voltage VG2S –5 • Drain current ID 55 • Allowable power dissipation PD 100 • Channel temperature Tch 125 • Storage temperature Tstg –55 to +150... |
| Document |
 SGM2014AN Data Sheet
PDF 57.15KB |
Similar Datasheet
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| 1 | SGM2014AM |
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| 2 | SGM2014M |
Sony Corporation |
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| 3 | SGM2013 |
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| 4 | SGM2013N |
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| 5 | SGM2015 |
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| 6 | SGM2016AM |
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Desde 2024. D4U Semiconductor.
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