SKP02N120 |
Part Number | SKP02N120 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:... |
Features |
r 10s Tj , Tstg -55...+150 260 °C
1)
VCE 1200V
IC 2A
Eoff 0.11mJ
Tj 150°C
Package TO-220AB TO-263AB(D2PAK)
Ordering Code Q67040-S4278 Q67040-S4279
Symbol VCE IC
Value 1200 6.2 2.8
Unit V A
ICpul s IF
9.6 9.6
4.5 2 IFpul s VGE tSC Ptot 9 ±20 10 62 V µs W
VGE = 15V, 100V≤VCC≤1200V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
Power Semiconductors
SKP02N120 SKB02N120
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambie... |
Document |
SKP02N120 Data Sheet
PDF 406.82KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SKP02N60 |
Infineon Technologies |
Fast IGBT | |
2 | SKP04N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode | |
3 | SKP06N60 |
Infineon Technologies |
Fast IGBT | |
4 | SKP-308H |
Samsung |
Keyphone & Standard Phone User Guide | |
5 | SKP-816H |
Samsung |
Keyphone & Standard Phone User Guide | |
6 | SKP-MS401 |
HERO ELECTRONICS |
Small PIR Module |