SK202 Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Datasheet. existencias, precio

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SK202

Polyfet RF Devices
SK202
SK202 SK202
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Part Number SK202
Manufacturer Polyfet RF Devices
Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver a...
Features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 10.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.40 C/W ABSOLUTE MAXIMUM RATINGS ( T = 25 oC ) Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Gate Voltage 200 oC oo -65 C to 150 C 3.0 A 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V RF CHARACT...

Document Datasheet SK202 Data Sheet
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