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K7A203600A |
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| Part Number | K7A203600A |
| Manufacturer | Samsung semiconductor |
| Description | The K7A203600A is a 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 64K words of 36bits ... |
| Features |
• • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD= 3.3V+0.3V/-0.165V Power Supply. VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. 5V Tolerant Inputs Except I/O Pins. Byte Writable Function. Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. LBO Pin allows a choice of either a interleaved burst or a linear burst. Three Chip Enables for simple depth expansion with No Data Contention ; ... |
| Document |
 K7A203600A Data Sheet
PDF 413.70KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K7A203600B |
Samsung semiconductor |
64Kx36/x32 Synchronous SRAM |
|
| 2 | K7A203200A |
Samsung semiconductor |
64Kx32-Bit Synchronous Pipelined Burst SRAM |
|
| 3 | K7A203200B |
Samsung semiconductor |
64Kx36/x32 Synchronous SRAM |
|
| 4 | K7A201800B |
Samsung semiconductor |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
|
| 5 | K7A161800A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM |
|
| 6 | K7A161801A |
Samsung semiconductor |
512K x 36 / 32 & 1M x 18 Synchronous SRAM |
|
Desde 2024. D4U Semiconductor.
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