K4S640832F-TC75 Samsung semiconductor LVTTL, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

K4S640832F-TC75

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Part Number	K4S640832F-TC75
Manufacturer	Samsung semiconductor
Description	The K4S640832F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allo...
Features	• • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S640832F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high ...
Document	K4S640832F-TC75 Data Sheet PDF 118.63KB

No.	Parte #	Fabricante	Descripción
1	K4S640832F-TL75	Samsung semiconductor	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
2	K4S640832F	Samsung semiconductor	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
3	K4S640832C	Samsung semiconductor	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
4	K4S640832D	Samsung semiconductor	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
5	K4S640832E	Samsung semiconductor	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
6	K4S640832E-TC1H	Samsung semiconductor	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL