K4S560832D |
Part Number | K4S560832D |
Manufacturer | Samsung semiconductor |
Description | The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allo... |
Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (8K Cycle) Part No. K4S560832D-TC/L7C K4S560832D-TC/L75 K4S560832D-TC/L1H K4S560832D-TC/L1L CMOS SDRAM GENERAL DESCRIPTION The K4S560832D is 268,435,456 bits synchronous high data... |
Document |
K4S560832D Data Sheet
PDF 118.69KB |
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