K4S560832B Samsung semiconductor LVTTL, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

K4S560832B

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Part Number	K4S560832B
Manufacturer	Samsung semiconductor
Description	The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design all...
Features	• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (8K Cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAM...
Document	K4S560832B Data Sheet PDF 131.52KB

No.	Parte #	Fabricante	Descripción
1	K4S560832A	Samsung semiconductor	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
2	K4S560832C	Samsung semiconductor	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
3	K4S560832D	Samsung semiconductor	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
4	K4S560832E-NC75	Samsung semiconductor	SDRAM 256Mb E-die
5	K4S560832E-NCL75	Samsung semiconductor	SDRAM 256Mb E-die
6	K4S560832E-TC75	Samsung semiconductor	256Mb E-die SDRAM Specification