K4S560432A Samsung semiconductor 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

K4S560432A

Samsung semiconductor
K4S560432A
K4S560432A K4S560432A
zoom Click to view a larger image
Part Number K4S560432A
Manufacturer Samsung semiconductor
Description The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design al...
Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (8K cycle) Part No. K4S560432A-TC/L75 K4S560432A-TC/L80 K4S560432A-TC/L1H K4S560432A-TC/L1L CMOS SDRAM GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data...

Document Datasheet K4S560432A Data Sheet
PDF 127.52KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 K4S560432B
Samsung semiconductor
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Datasheet
2 K4S560432E-NC75
Samsung semiconductor
SDRAM 256Mb E-die Datasheet
3 K4S560432E-NCL75
Samsung semiconductor
SDRAM 256Mb E-die Datasheet
4 K4S560432E-TC75
Samsung semiconductor
256Mb E-die SDRAM Specification Datasheet
5 K4S560432E-TL75
Samsung semiconductor
256Mb E-die SDRAM Specification Datasheet
6 K4S560432E-UC75
Samsung
SDRAM 256Mb E-die Datasheet
More datasheet from Samsung semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad