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K4S511632M-TC |
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| Part Number | K4S511632M-TC |
| Manufacturer | Samsung semiconductor |
| Description | The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design all... |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (8K cycle) Part No. K4S511632M-TC/TL75 K4S511632M-TC/TL1H K4S511632M-TC/TL1L CMOS SDRAM GENERAL DESCRIPTION The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic R... |
| Document |
 K4S511632M-TC Data Sheet
PDF 111.71KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4S511632M-TL1H |
Samsung semiconductor |
512Mbit SDRAM |
|
| 2 | K4S511632M-TL1L |
Samsung semiconductor |
512Mbit SDRAM |
|
| 3 | K4S511632M-TL75 |
Samsung semiconductor |
512Mbit SDRAM |
|
| 4 | K4S511632M |
Samsung semiconductor |
512Mbit SDRAM |
|
| 5 | K4S511632B-TC75 |
Samsung semiconductor |
512Mb B-die SDRAM Specification |
|
| 6 | K4S511632B-TCL75 |
Samsung semiconductor |
512Mb B-die SDRAM Specification |
|
Desde 2024. D4U Semiconductor.
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