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K4S283233F-F1L |
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| Part Number | K4S283233F-F1L |
| Manufacturer | Samsung semiconductor |
| Description | The K4S283233F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design al... |
| Features |
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • • • • 64ms refresh period (4K cycle). Co... |
| Document |
 K4S283233F-F1L Data Sheet
PDF 140.98KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4S283233F-F1H |
Samsung semiconductor |
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 2 | K4S283233F-F60 |
Samsung semiconductor |
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 3 | K4S283233F-F75 |
Samsung semiconductor |
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 4 | K4S283233F-FE |
Samsung semiconductor |
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 5 | K4S283233F-FHE |
Samsung semiconductor |
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 6 | K4S283233F-C |
Samsung semiconductor |
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
Desde 2024. D4U Semiconductor.
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