K4S161622H Samsung semiconductor Specification, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

K4S161622H

Click to view a larger image

Part Number	K4S161622H
Manufacturer	Samsung semiconductor
Description	The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allow...
Features	• • • • 3.3V power supply LVTTL compatible with multiplexed address two banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 32ms refresh period (2K cycle) CMOS SDRAM • • • • • GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high perfo...
Document	K4S161622H Data Sheet PDF 108.44KB

No.	Parte #	Fabricante	Descripción
1	K4S161622D	Samsung semiconductor	512K x 16Bit x 2 Banks Synchronous DRAM
2	K4S161622E	Samsung semiconductor	1M x 16 SDRAM
3	K4S160822D	Samsung semiconductor	2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
4	K4S1G0632D	Samsung Electronics	SDRAM stacked 1Gb D-die
5	K4S1G0732B-TC75	Samsung semiconductor	SDRAM stacked 1Gb B-die
6	K4S1G0732D	Samsung Electronics	SDRAM stacked 1Gb D-die