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IXTM75N10 |
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| Part Number | IXTM75N10 |
| Manufacturer | IXYS Corporation |
| Description | MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratin... |
| Features |
S
D = Drain, TAB = Drain
D (TAB)
z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect z Fast intrinsic Rectifier
B Symbol
Test Conditions
O VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
100
V
Applications
z DC-DC converters z Synchronous rectification z Battery chargers z Switched-mode and resonant-mode
power supplies
VGS(th)
VDS = VGS, ID = 4 mA
2.0
4V
z DC choppers
z... |
| Document |
 IXTM75N10 Data Sheet
PDF 1.11MB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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