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IXFX120N20 |
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| Part Number | IXFX120N20 |
| Manufacturer | IXYS Corporation |
| Description | HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFX 120N20 IXFK 120N20 VDSS ID25 RDS(on) = 200 V = 120 A = 17 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR E... |
| Features |
• International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±200 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 17 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 • ID25 Note 1 Applications • DC-DC converters • Battery chargers... |
| Document |
 IXFX120N20 Data Sheet
PDF 48.09KB |
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Desde 2024. D4U Semiconductor.
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