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IXBH9N160G |
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| Part Number | IXBH9N160G |
| Manufacturer | IXYS Corporation |
| Description | High Voltage BiMOSFETTM IXBH9N160G Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET Transistor VCES = 1600V IC25 = 9A VCE(sat) 7.0V tfi(typ) = 70ns TO-247 Symbol VCES VCGR V... |
| Features |
High Voltage Package - Replaces High Voltage Darlingtons and Series Connected MOSFETs - Lower Effective RDSON MOS Gate turn-on - Drive Simplicity - MOSFET Compatible for 10V turn on Gate Voltage Monolithic construction - High Blocking Voltage Capability - Very Fast turn-off Characteristics International Standard Package - Reverse Conducting Capability Advantages Low Gate Drive Requirement High Power Density Applications Flyback Converters DC Choppers Uninterruptible Power Supplies (UPS) Switched-Mode & Resonant-Mode Power Supplies CRT Deflection Lamp Ballasts ©2019 IXY... |
| Document |
 IXBH9N160G Data Sheet
PDF 177.33KB |
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Desde 2024. D4U Semiconductor.
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