KSE340 |
Part Number | KSE340 |
Manufacturer | Fairchild Semiconductor |
Description | KSE340 KSE340 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to KSE350 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epi... |
Features |
E(sat)[V], SATURATION VOLTAGE
VCE = 2V
1.2
IC = 10IB
1.0
hFE, DC CURRENT GAIN
100
0.8
V BE(sat)
0.6
V CE(sat)
0.4
10
0.2
1 1 10 100 1000
0.0 10 100 1000
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
10
32
28
IC[A], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
24
1
10
20
µs
0 50
s 1m
µs
DC
16
12
0.1
8
4
0.01 1 10 100
0 0 25 50
o
75
100
125
150
175
VCE [V], COLLECTOR-EMITTER VOLTAGE
Tc[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area
Figure 4... |
Document |
KSE340 Data Sheet
PDF 38.27KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | KSE340 |
INCHANGE |
NPN Transistor | |
2 | KSE3055T |
Fairchild Semiconductor |
NPN Silicon Transistor | |
3 | KSE3055T |
Samsung |
NPN Silicon Transistot | |
4 | KSE350 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
5 | KSE350 |
INCHANGE |
PNP Transistor | |
6 | KSE05VL4-C |
SeCoS |
Transient Voltage Suppressors for ESD Protection |