KSE3055T Fairchild Semiconductor NPN Silicon Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

KSE3055T

Fairchild Semiconductor
KSE3055T
KSE3055T KSE3055T
zoom Click to view a larger image
Part Number KSE3055T
Manufacturer Fairchild Semiconductor
Description KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) 1 TO-220 2.Collector 3.Emitter 1.Base ...
Features A, IB = 0.4A IC = 10A, IB = 3.3A VCE = 4V, IC = 4A VCE = 10V, IC = 500mA 2 20 5 Min. 60 Max. 700 1 5 5 100 1.1 8 1.8 V V V MHz Units V µA mA mA mA Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter On Voltage Current Gain Bandwidth Product * Pulse test: PW≤300µs, duty cycle≤2% Pulse ©2000 Fairchild Semiconductor International Rev. A1, December 2000 KSE3055T Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 VCE = 2V IC = 10IB hFE, DC CURRENT GAIN 100 1 V BE(sat) 10 0.1 VCE (sat) 1 0.01 0.1 1 10 0.01 0.1 1 ...

Document Datasheet KSE3055T Data Sheet
PDF 38.01KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 KSE3055T
Samsung
NPN Silicon Transistot Datasheet
2 KSE340
Fairchild Semiconductor
NPN Epitaxial Silicon Transistor Datasheet
3 KSE340
INCHANGE
NPN Transistor Datasheet
4 KSE350
Fairchild Semiconductor
PNP Epitaxial Silicon Transistor Datasheet
5 KSE350
INCHANGE
PNP Transistor Datasheet
6 KSE05VL4-C
SeCoS
Transient Voltage Suppressors for ESD Protection Datasheet
More datasheet from Fairchild Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad