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KM416S8030B |
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| Part Number | KM416S8030B |
| Manufacturer | Samsung semiconductor |
| Description | The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design a... |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle) Part No. KM416S8030BT-G/FA KM416S8030BT-G/F8 KM416S8030BT-G/FH KM416S8030BT-G/FL CMOS SDRAM GENERAL DESCRIPTION The KM416S8030B is 134,217,728 bits synchronous high dat... |
| Document |
 KM416S8030B Data Sheet
PDF 133.48KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KM416S8030 |
Samsung semiconductor |
2M x 16Bit x 4 Banks Synchronous DRAM |
|
| 2 | KM416S8030BN |
Samsung semiconductor |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
|
| 3 | KM416S1020BT-G10T |
ETC |
CMOS 16M-Bit SDRAM |
|
| 4 | KM416S1020C |
Samsung Semiconductor |
1M x 16 SDRAM |
|
| 5 | KM416S1021C |
Samsung Semiconductor |
512K x 16-Bit x 2-Bank SDRAM |
|
| 6 | KM416S1120AT |
Samsung Electronics |
521K x 16-Bit x 2 Bank SDRAM |
|
Desde 2024. D4U Semiconductor.
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