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KM416S8030 |
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| Part Number | KM416S8030 |
| Manufacturer | Samsung semiconductor |
| Description | The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design al... |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst Read Single-bit Write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle) Preliminary CMOS SDRAM GENERAL DESCRIPTION The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabric... |
| Document |
 KM416S8030 Data Sheet
PDF 116.91KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KM416S8030B |
Samsung semiconductor |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
|
| 2 | KM416S8030BN |
Samsung semiconductor |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
|
| 3 | KM416S1020BT-G10T |
ETC |
CMOS 16M-Bit SDRAM |
|
| 4 | KM416S1020C |
Samsung Semiconductor |
1M x 16 SDRAM |
|
| 5 | KM416S1021C |
Samsung Semiconductor |
512K x 16-Bit x 2-Bank SDRAM |
|
| 6 | KM416S1120AT |
Samsung Electronics |
521K x 16-Bit x 2 Bank SDRAM |
|
Desde 2024. D4U Semiconductor.
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