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KM416S4030C |
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| Part Number | KM416S4030C |
| Manufacturer | Samsung semiconductor |
| Description | The KM416S4030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG ′s high performance CMOS technology. Synchronous design a... |
| Features |
• • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) Preliminary CMOS SDRAM GENERAL DESCRIPTION The KM416S4030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with S... |
| Document |
 KM416S4030C Data Sheet
PDF 124.27KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KM416S4020A |
Samsung Electronics |
CMOS SDRAM |
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| 2 | KM416S4020B |
Samsung Electronics |
CMOS SDRAM |
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| 3 | KM416S4021AT |
Samsung Electronics |
CMOS SDRAM |
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| 4 | KM416S4021B |
Samsung Electronics |
CMOS SDRAM |
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| 5 | KM416S1020BT-G10T |
ETC |
CMOS 16M-Bit SDRAM |
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| 6 | KM416S1020C |
Samsung Semiconductor |
1M x 16 SDRAM |
|
Desde 2024. D4U Semiconductor.
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