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60N035 |
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| Part Number | 60N035 |
| Manufacturer | ETC |
| Description | The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and... |
| Features |
• • • Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.015 Ω ID = 60A Ordering Information Device 60N035T 60N035S Package TO-220 TO-263 ( D2 ) Temp. 0 to 150°C 0 to 150°C Absolute Maximum Rating Symbol ID Parameter Drain Current Continues Pulsed Drain-Source Voltage Gate Source Voltage Total Power Dissipation @ TC =25°C Derate above 25°C Operating and Storage Temperature Range Max 60 180 30 ±2... |
| Document |
 60N035 Data Sheet
PDF 34.15KB |
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Desde 2024. D4U Semiconductor.
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