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2SD2526 |
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| Part Number | 2SD2526 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm · High DC c... |
| Features |
or-emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) (1) VCE (sat) (2) VBE (sat)
VCB = 100 V, IE = 0 VEB = 6 V, IC = 0 IC = 30 mA, IB = 0 VCE = 3 V, IC = 3 A VCE = 3 V, IC = 5 A IC = 3 A, IB = 6 mA IC = 5 A, IB = 20 mA IC = 3 A, IB = 6 mA
Min
― ― 100 2000 1000 ― ― ―
Typ. Max Unit
― 100 µA
― 2.5 mA
――
V
― 15000
――
1.1 1.5 1.3 2.5
V
1.7 2.5
V
Turn-on time
ton
20 µs
Input
Output
― 1.0 ―
IB1
IB1 IB2 10 Ω
Switching time Storage time
tstg
IB2 ― 4.0 ― µs
Fall time
VCC = 30 V
tf IB1 = −IB2 = 6 ... |
| Document |
 2SD2526 Data Sheet
PDF 144.23KB |
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