2SD2204 |
Part Number | 2SD2204 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | 2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • • High DC current gain: hFE = 2000 (min... |
Features |
ng temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Base ≈ 5 kΩ ≈ 150 Ω Emitter
1
2006-11-21
http://www.Datasheet4U.com
2SD2204
Electrical Characteristics (Tc = 25°C)
Characteristics S Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gai... |
Document |
2SD2204 Data Sheet
PDF 220.54KB |
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