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2SD2029 |
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| Part Number | 2SD2029 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SD2029 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1347 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q q Satisfactor... |
| Features |
q q q q
Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C)
Ratings 160 160 5 20 12 120 3.5 150 –55 to +155 Unit V V V A 26.0±0.5 10.0 1.5 2.0 4.0 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP I... |
| Document |
 2SD2029 Data Sheet
PDF 54.83KB |
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