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2SD1922 |
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| Part Number | 2SD1922 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SD1922 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1922 Absolute Maximum Ratings (Ta = 25°C) Item Collecto... |
| Features |
eakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage E to C diode forward voltage Note: 1. Pulse test I EBO hFE VCE(sat) VD
2
2SD1922
Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Area of Safe Operation 10 3 1.0 0.3 0.1 0.03 Ta = 25°C 1 Shot Pulse iC(peak) IC(max)
DC
1 m s
Collector Current IC (A)
PW
0.8
s m n 10 = tio ra pe O
0.4
0
50 100 150 Ambient Temperature Ta (°... |
| Document |
 2SD1922 Data Sheet
PDF 33.94KB |
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