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2SD1611 |
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| Part Number | 2SD1611 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SD1611 Silicon NPN triple diffusion planar type Darlington For power amplification 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q 1.5max. 1.1max. H... |
| Features |
q q q
1.5max.
1.1max.
High foward current transfer ratio hFE High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 500 400 5 10... |
| Document |
 2SD1611 Data Sheet
PDF 64.21KB |
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