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2SD1610 |
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| Part Number | 2SD1610 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Abso... |
| Features |
= 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz
Min 160 160 5 — —
Typ — — — — — — — — — 140 3.8
DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage
60 30 — — — —
VCE(sat)
Gain bandwidth product f T Collector output capacitance Note: B 60 to 120 Cob
1. The 2SD1609 and 2SD1610 are grouped by h FE1 as follows. C 100 to 200 D 160 to 320
Maximum Collector Dissipation Curve ... |
| Document |
 2SD1610 Data Sheet
PDF 32.52KB |
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