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2SD1472 |
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| Part Number | 2SD1472 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SD1472 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 1 3 2 1 2 ID 2 kΩ (Typ) 0.5 kΩ (Typ) 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) ... |
| Features |
C = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage hFE VCE(sat)1 VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 E to C diode forward voltage Notes: 1. Pulse test 2. Marking is “CT”. VD
2
2SD1472
Maximum Collector Dissipation Curve 1.2 Collector Power Di... |
| Document |
 2SD1472 Data Sheet
PDF 33.36KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 2SD1470 |
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| 2 | 2SD1471 |
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| 3 | 2SD1474 |
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| 4 | 2SD1475 |
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| 5 | 2SD1475 |
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| 6 | 2SD1476 |
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