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2SD1471 |
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| Part Number | 2SD1471 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SD1471 Silicon NPN Planar, Darlington Application High gain amplifier Outline UPAK 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 1 3 2SD1471 Absolute Maximum Ratings (Ta = 2... |
| Features |
0 mA*2 I C = 100 mA, IB = 0.1 mA*2 I C = 100 mA, IB = 0.1 mA*2
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE1* hFE2* 1 hFE3* 1 Collector to emitter saturation voltage Base to emitter saturation voltage VCE(sat) VBE(sat)
2000 3000 3000 — —
V V
Notes: 1. The 2SD1471 is grouped by h FE as follows. 2. Pulse test Mark hFE1 hFE2 hFE3 DT ET 2000 to 100000 5000 to 100000 3000 min 3000 min 10000 min 10000 min
2
2SD1471
Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation ... |
| Document |
 2SD1471 Data Sheet
PDF 32.50KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1470 |
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Silicon NPN Epitaxial Planar Transistor |
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| 2 | 2SD1472 |
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| 3 | 2SD1474 |
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| 4 | 2SD1475 |
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Silicon NPN Transistor |
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| 5 | 2SD1475 |
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| 6 | 2SD1476 |
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Power Transistor |
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