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2SC5713 |
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| Part Number | 2SC5713 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 400 to 1000 (IC = 0.... |
| Features |
er breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 20 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.6 A IC = 1.6 A, IB = 32 mA IC = 1.6 A, IB = 32 mA VCB = 10 V, IE = 0, f = 1 MHz See Figure 1 circuit diagram. VCC ∼ − 6 V, RL = 3.75 Ω IB1 = −IB2 = 53 mA Min 10 400 200 Typ. 28 110 150 50 Max 100 1... |
| Document |
 2SC5713 Data Sheet
PDF 159.27KB |
Similar Datasheet
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| 1 | 2SC5710 |
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| 2 | 2SC5712 |
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| 3 | 2SC5714 |
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