2SC5517 |
Part Number | 2SC5517 |
Manufacturer | Panasonic Semiconductor |
Description | Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 I ... |
Features |
• High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO) 5˚ (4.0) 5˚ 2.0±0.2 5˚ / 1.1±0.1 0.7±0.1 I Absolute Maximum Ratings TC = 25°C 5.45±0.3 e ) Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip c type Collector to base voltage VCBO 1 700 V 3.3±0.3 5.5±0.3 n d ge. ed Collector to emitter voltage VCES 1 700 (2.0) V sta tinu Emitter to base voltage VEBO 7 V a e cle con Peak collector current ICP 12 A lifecy , dis Collector current IC 6 A n u ct ed Base curr... |
Document |
2SC5517 Data Sheet
PDF 200.68KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC5511 |
Rohm |
Transistors | |
2 | 2SC5513 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
3 | 2SC5514 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
4 | 2SC5515 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
5 | 2SC5516 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
6 | 2SC5516 |
INCHANGE |
NPN Transistor |