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2SC5199 |
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| Part Number | 2SC5199 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications 2SC5199 Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SA1942 • Suitable for use i... |
| Features |
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 160 V, ... |
| Document |
 2SC5199 Data Sheet
PDF 116.71KB |
Desde 2024. D4U Semiconductor.
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