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2SC5196 |
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| Part Number | 2SC5196 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications 2SC5196 Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output... |
| Features |
ability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 80 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 m... |
| Document |
 2SC5196 Data Sheet
PDF 120.58KB |
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