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2SC5122 |
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| Part Number | 2SC5122 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.4 V (t... |
| Features |
olute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
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2009-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance
Symbol
Test Condition
ICBO IEBO V ... |
| Document |
 2SC5122 Data Sheet
PDF 105.93KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC512 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC5121 |
Panasonic Semiconductor |
NPN Transistor |
|
| 3 | 2SC5124 |
Sanken electric |
NPN TRANSISTOR |
|
| 4 | 2SC5124 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC5124 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC5125 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|