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2SC5000 |
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| Part Number | 2SC5000 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications 2SC5000 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A) Absolute Maximum Ratings (... |
| Features |
ba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain
Collector-emitter Saturation voltage
Base-emitter Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE (1) VCE (sat) VBE (sat)
fT Cob
VCB = 70 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0... |
| Document |
 2SC5000 Data Sheet
PDF 122.33KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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