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2SC4913 |
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| Part Number | 2SC4913 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC4913 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage • V(BR)CEO = 2000 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter ... |
| Features |
• High breakdown voltage • V(BR)CEO = 2000 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SC4913 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C(peak) PC Tj Tstg Ratings 2000 2000 6 20 40 1.5 150 –55 to +150 Unit V V V mA mA W °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC curre... |
| Document |
 2SC4913 Data Sheet
PDF 31.24KB |
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