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2SC4647 |
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| Part Number | 2SC4647 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC4647 Silicon NPN Triple Diffused Application High voltage amplifier Features • High break down voltage V(BR)CEO = 300 V min. Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4647 Abs... |
| Features |
• High break down voltage V(BR)CEO = 300 V min. Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4647 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 400 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff curre... |
| Document |
 2SC4647 Data Sheet
PDF 28.92KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC4640 |
Sanyo |
Silicon Transistor |
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| 2 | 2SC4641 |
Sanyo Semicon Device |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
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| 3 | 2SC4641 |
Sanyo |
Transistor |
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| 4 | 2SC4643 |
Hitachi Semiconductor |
NPN TRANSISTOR |
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| 5 | 2SC4644 |
Sanyo Semicon Device |
NPN TRANSISTOR |
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| 6 | 2SC4645 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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