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4AK19 |
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| Part Number | 4AK19 |
| Manufacturer | Hitachi Semiconductor |
| Description | 4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω... |
| Features |
• Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices. • High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK19 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 devices poeration ... |
| Document |
 4AK19 Data Sheet
PDF 53.09KB |
Similar Datasheet
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