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FQPF12N60C |
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| Part Number | FQPF12N60C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 21 pF) • 100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC =... |
| Document |
 FQPF12N60C Data Sheet
PDF 1.15MB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FQPF12N60 |
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| 2 | FQPF12N60 |
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| 3 | FQPF12N60C |
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| 6 | FQPF12N20 |
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Desde 2024. D4U Semiconductor.
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