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FQPF11P06 |
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| Part Number | FQPF11P06 |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to... |
| Features |
• -8.6 A, -60 V, RDS(on)=175 mΩ(Max.) @VGS=-10 V, ID=-4.3 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 45 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating S ! GD S TO-220F G! ● ● ▶▲ ● ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note ... |
| Document |
 FQPF11P06 Data Sheet
PDF 746.40KB |
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Desde 2024. D4U Semiconductor.
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