Busque con el número de pieza junto con el fabricante o la descripción
FQPF10N60C |
Click to view a larger image
| Part Number | FQPF10N60C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 18 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Dr... |
| Document |
 FQPF10N60C Data Sheet
PDF 1.30MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQPF10N60 |
Oucan Semi |
N-Channel MOSFET |
|
| 2 | FQPF10N60CF |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FQPF10N65 |
Oucan Semi |
10A N-Channel MOSFET |
|
| 4 | FQPF10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQPF10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 6 | FQPF10N20C |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|