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FQP8N80C |
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| Part Number | FQP8N80C |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 8.0 A, 800 V, RDS(on) = 1.55 Ω (Max.) @ VGS = 10 V, ID = 4.0 A • Low Gate Charge (Typ. 35 nC) • Low Crss (Typ. 13 pF) • 100% Avalanche Tested D GDS TO-220 GDS D G TO-220F S G TO-220F Y-formed Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C) - Der... |
| Document |
 FQP8N80C Data Sheet
PDF 1.10MB |
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Desde 2024. D4U Semiconductor.
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