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FQP4N20L |
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| Part Number | FQP4N20L |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize ... |
| Features |
• 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A • Low Gate Charge (Typ. 4.0 nC) • Low Crss (Typ. 6.0 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) ... |
| Document |
 FQP4N20L Data Sheet
PDF 0.95MB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FQP4N20 |
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200V N-Channel MOSFET |
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| 2 | FQP4N20 |
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| 3 | FQP4N25 |
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| 4 | FQP4N50 |
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| 5 | FQP4N60 |
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| 6 | FQP4N60 |
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Desde 2024. D4U Semiconductor.
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