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FQP15P12 |
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| Part Number | FQP15P12 |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to... |
| Features |
• -15 A, -120 V, RDS(on) = 0.2 Ω (Max.) @ VGS=-10 V, ID = -7.5 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ. 110 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating S G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous... |
| Document |
 FQP15P12 Data Sheet
PDF 0.98MB |
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Desde 2024. D4U Semiconductor.
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