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FQI6N60 |
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| Part Number | FQI6N60 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB6N60 / FQI6N60 600 6.2 3.9 24.8 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W ... |
| Document |
 FQI6N60 Data Sheet
PDF 547.21KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FQI6N15 |
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150V N-Channel MOSFET |
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| 2 | FQI6N25 |
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| 3 | FQI6N40 |
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400V N-Channel MOSFET |
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| 4 | FQI6N40C |
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400V N-Channel MOSFET |
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| 5 | FQI6N45 |
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| 6 | FQI6N50 |
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500V N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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