FQI34N20L |
Part Number | FQI34N20L |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • 31A, 200V, RDS(on) = 0.075Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 52 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drivers D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB34N20L / FQI34N20L 200 31 20 1... |
Document |
FQI34N20L Data Sheet
PDF 661.93KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQI34N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
2 | FQI30N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
3 | FQI33N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET | |
4 | FQI3N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
5 | FQI3N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
6 | FQI3N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |