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FQI11N40 |
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| Part Number | FQI11N40 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB11N40 / FQI11N40 400 11.4 7.2 46 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V W W W/°C... |
| Document |
 FQI11N40 Data Sheet
PDF 566.93KB |
Similar Datasheet
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| 1 | FQI11N40C |
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Desde 2024. D4U Semiconductor.
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