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FQD13N10 |
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| Part Number | FQD13N10 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 10A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD13N10 / FQU13N10 100 10 6.3 40 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °... |
| Document |
 FQD13N10 Data Sheet
PDF 619.06KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQD13N10 |
INCHANGE |
N-Channel MOSFET |
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| 2 | FQD13N10L |
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100V LOGIC N-Channel MOSFET |
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| 3 | FQD13N06 |
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| 4 | FQD13N06L |
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| 5 | FQD13N06TM |
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60V N-Channel MOSFET |
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| 6 | FQD10N20 |
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200V N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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