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FQD13N06 |
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| Part Number | FQD13N06 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 10 A, 60 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 5.0 A • Low Gate Charge (Typ. 5.8 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - D... |
| Document |
 FQD13N06 Data Sheet
PDF 812.13KB |
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Desde 2024. D4U Semiconductor.
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